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STP4NA60FI from ST,ST Microelectronics

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STP4NA60FI

Manufacturer: ST

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

Partnumber Manufacturer Quantity Availability
STP4NA60FI ST 50 In Stock

Description and Introduction

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN The STP4NA60FI is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:  

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 4A  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 2.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 120pF (typ)  
- **Output Capacitance (Coss):** 20pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 5pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 50ns (typ)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Descriptions and Features:**  
- **Technology:** N-channel Power MOSFET  
- **Package:** TO-220FP (isolated tab)  
- **Low Gate Charge:** Ensures fast switching performance  
- **Avalanche Rugged:** High energy capability  
- **Low Crss:** Reduces Miller feedback effect  
- **Applications:** Switching power supplies, motor control, lighting, and general-purpose power switching  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN

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