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STP3NC60FP from ST,ST Microelectronics

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STP3NC60FP

Manufacturer: ST

N-CHANNEL 600V 3.3 OHM 3A TO-220/TO-220FP POWER MESH II MOSFET

Partnumber Manufacturer Quantity Availability
STP3NC60FP ST 3000 In Stock

Description and Introduction

N-CHANNEL 600V 3.3 OHM 3A TO-220/TO-220FP POWER MESH II MOSFET The STP3NC60FP is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are the factual details about its specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 3A  
- **Pulsed Drain Current (IDM):** 12A  
- **Power Dissipation (Ptot):** 40W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-State Resistance (RDS(on)):** 2.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 300pF (typ)  
- **Output Capacitance (Coss):** 50pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 10pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 55ns (typ)  
- **Operating Junction Temperature (Tj):** -55°C to 150°C  

### **Description:**  
The STP3NC60FP is a high-voltage MOSFET designed for switching applications. It is optimized for high efficiency and fast switching performance in power supplies, motor control, and lighting applications.  

### **Features:**  
- **High Voltage Capability:** 600V breakdown voltage for robust performance.  
- **Low Gate Charge:** Enables fast switching and reduced power losses.  
- **Avalanche Ruggedness:** Enhanced reliability under inductive load conditions.  
- **Low On-Resistance:** Minimizes conduction losses.  
- **TO-220FP Package:** Provides efficient thermal dissipation.  
- **100% Avalanche Tested:** Ensures high reliability in harsh conditions.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-CHANNEL 600V 3.3 OHM 3A TO-220/TO-220FP POWER MESH II MOSFET

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