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STP3NB60FP from ST,ST Microelectronics

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STP3NB60FP

Manufacturer: ST

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Partnumber Manufacturer Quantity Availability
STP3NB60FP ST 413 In Stock

Description and Introduction

N The STP3NB60FP is an N-channel Power MOSFET manufactured by STMicroelectronics. Here are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 2.5A (at 25°C)  
- **Pulsed Drain Current (IDM):** 10A  
- **Power Dissipation (PD):** 35W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 3.5Ω (max) at VGS = 10V  
- **Input Capacitance (Ciss):** 150pF (typ)  
- **Output Capacitance (Coss):** 25pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 5pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 35ns (typ)  
- **Operating Temperature Range:** -55°C to 150°C  

### **Description:**  
The STP3NB60FP is a high-voltage MOSFET designed for switching applications, featuring low gate charge and fast switching performance. It is housed in a TO-220FP package, providing efficient thermal dissipation.  

### **Features:**  
- **High Voltage Capability (600V)**  
- **Low Gate Charge (Qg)**  
- **Fast Switching Speed**  
- **Low On-Resistance**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **Zener-Protected Gate**  

This MOSFET is commonly used in power supplies, inverters, and motor control applications.

Application Scenarios & Design Considerations

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