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STP2NK60Z from ST,ST Microelectronics

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STP2NK60Z

Manufacturer: ST

N-CHANNEL 600V

Partnumber Manufacturer Quantity Availability
STP2NK60Z ST 50 In Stock

Description and Introduction

N-CHANNEL 600V The STP2NK60Z is an N-channel Power MOSFET manufactured by STMicroelectronics.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 2A  
- **Pulsed Drain Current (IDM):** 8A  
- **Power Dissipation (Ptot):** 40W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 3.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 300pF (typ)  
- **Total Gate Charge (Qg):** 8nC (typ)  
- **Operating Junction Temperature (Tj):** -55°C to 150°C  

### **Descriptions and Features:**  
- **High Voltage Capability:** Suitable for switching applications up to 600V.  
- **Low Gate Charge:** Ensures fast switching performance.  
- **Avalanche Ruggedness:** Designed to withstand high-energy transients.  
- **Low On-Resistance:** Improves efficiency in power applications.  
- **TO-220 Package:** Provides good thermal performance.  
- **Applications:** Used in power supplies, motor control, lighting, and other high-voltage switching circuits.  

This information is based on the manufacturer's datasheet.

Application Scenarios & Design Considerations

N-CHANNEL 600V

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