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STP2HNC60FP from ST,ST Microelectronics

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STP2HNC60FP

Manufacturer: ST

N-CHANNEL 600V 4 OHM 2.2A TO-220/TO-220FP POWERMESH II MOSFET

Partnumber Manufacturer Quantity Availability
STP2HNC60FP ST 200 In Stock

Description and Introduction

N-CHANNEL 600V 4 OHM 2.2A TO-220/TO-220FP POWERMESH II MOSFET The STP2HNC60FP is a power MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Technology:** N-channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 2A  
- **Pulsed Drain Current (IDM):** 8A  
- **Power Dissipation (PD):** 35W  
- **Gate-Source Voltage (VGS):** ±25V  
- **On-Resistance (RDS(on)):** 3.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 150pF (typ)  
- **Output Capacitance (Coss):** 30pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 10pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 35ns (typ)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Package:**  
- **Type:** TO-220FP (fully insulated)  
- **Mounting Style:** Through-hole  
- **Pin Count:** 3  

### **Descriptions and Features:**  
- **High Voltage Capability:** 600V breakdown voltage for robust performance in high-voltage applications.  
- **Low Gate Charge:** Ensures fast switching performance.  
- **Fully Insulated Package:** TO-220FP provides electrical isolation between the heatsink and the device.  
- **Avalanche Rated:** Designed to withstand high-energy transients.  
- **Applications:**  
  - Switching power supplies  
  - Motor control  
  - Lighting systems  
  - Industrial and consumer electronics  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N-CHANNEL 600V 4 OHM 2.2A TO-220/TO-220FP POWERMESH II MOSFET

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