N-CHANNEL 500 V The STP22NM50 is a power MOSFET manufactured by STMicroelectronics. Here are its key specifications, descriptions, and features:
### **Specifications:**
- **Drain-Source Voltage (VDS):** 500V
- **Continuous Drain Current (ID):** 22A
- **Pulsed Drain Current (IDM):** 88A
- **Power Dissipation (PD):** 190W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.16Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1800pF (typ)
- **Output Capacitance (Coss):** 300pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Operating Temperature Range:** -55°C to 150°C
### **Description:**
The STP22NM50 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is optimized for low on-resistance and high efficiency in power conversion circuits.
### **Features:**
- **High Voltage Capability:** 500V breakdown voltage for robust performance.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Suitable for high-frequency applications.
- **Avalanche Energy Specified:** Ensures reliability under inductive loads.
- **100% Avalanche Tested:** Guarantees ruggedness in harsh conditions.
- **TO-220 Package:** Provides good thermal dissipation.
This MOSFET is commonly used in power supplies, motor control, lighting, and other high-voltage switching applications.
