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STP16NB25 from ST,ST Microelectronics

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STP16NB25

Manufacturer: ST

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Partnumber Manufacturer Quantity Availability
STP16NB25 ST 2100 In Stock

Description and Introduction

N The **STP16NB25** is an N-channel Power MOSFET manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 250V  
- **Continuous Drain Current (ID):** 16A  
- **Pulsed Drain Current (IDM):** 64A  
- **Power Dissipation (PD):** 150W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.25Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 1000pF (typ)  
- **Output Capacitance (Coss):** 300pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Switching Characteristics:**  
  - Turn-On Delay Time (td(on)): 10ns (typ)  
  - Turn-Off Delay Time (td(off)): 55ns (typ)  
- **Package:** TO-220  

### **Features:**  
- **High voltage capability** (250V)  
- **Low on-resistance** for reduced conduction losses  
- **Fast switching speed** for high-frequency applications  
- **Avalanche ruggedness** for improved reliability  
- **Low gate charge** for efficient drive requirements  
- **Fully characterized for linear mode operation**  

The STP16NB25 is designed for **power switching applications**, including **motor control, power supplies, and inverters**.

Application Scenarios & Design Considerations

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