N-channel 600 V **Manufacturer:** STMicroelectronics
**Part Number:** STP15NM60ND
### **Specifications:**
- **Transistor Type:** N-Channel Power MOSFET
- **Technology:** MDmesh™ II
- **Drain-Source Voltage (VDSS):** 650 V
- **Continuous Drain Current (ID):** 15 A
- **Pulsed Drain Current (IDM):** 60 A
- **Power Dissipation (Ptot):** 190 W
- **Gate-Source Voltage (VGS):** ±30 V
- **On-Resistance (RDS(on)):** 0.35 Ω (max) at VGS = 10 V
- **Total Gate Charge (Qg):** 45 nC (typ)
- **Input Capacitance (Ciss):** 1500 pF (typ)
- **Operating Junction Temperature (TJ):** -55°C to 150°C
- **Package:** TO-220
### **Descriptions:**
The STP15NM60ND is a high-voltage N-channel Power MOSFET based on STMicroelectronics' MDmesh™ II technology, optimized for high-efficiency switching applications. It offers low on-resistance, fast switching, and high ruggedness.
### **Features:**
- **Low Gate Charge:** Ensures reduced switching losses.
- **Low RDS(on):** Enhances conduction efficiency.
- **Avalanche Ruggedness:** High energy capability for reliability in harsh conditions.
- **Fast Switching Speed:** Suitable for high-frequency applications.
- **Improved dv/dt Capability:** Enhanced performance in switching circuits.
- **100% Avalanche Tested:** Ensures robustness in inductive load applications.
(Data sourced from STMicroelectronics' official documentation.)
