N-CHANNEL 600V **Manufacturer:** STMicroelectronics (ST)
**Part Number:** STP11NM60FP
**Specifications:**
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 11A
- **Pulsed Drain Current (IDM):** 44A
- **Power Dissipation (Ptot):** 190W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.38Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1500pF (typ)
- **Output Capacitance (Coss):** 250pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 60ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-220FP (Fully Insulated)
**Descriptions:**
The STP11NM60FP is a high-voltage N-channel Power MOSFET designed for high-efficiency switching applications. It features low on-resistance, fast switching speed, and a fully insulated package for improved thermal performance and safety.
**Features:**
- Low gate charge for fast switching
- Low RDS(on) for reduced conduction losses
- Fully insulated TO-220FP package for easy mounting
- Avalanche ruggedness for enhanced reliability
- 100% avalanche tested for robustness
- Suitable for high-voltage applications such as power supplies, motor control, and lighting.
