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STP11NM60 from ST,ST,ST Microelectronics

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STP11NM60

Manufacturer: ST,ST

N-CHANNEL 600V 0.4 OHM 11A TO-220/D2PAK/I2PAK/TO-220FP MDMESH POWER MOSFET

Partnumber Manufacturer Quantity Availability
STP11NM60 ST,ST 4000 In Stock

Description and Introduction

N-CHANNEL 600V 0.4 OHM 11A TO-220/D2PAK/I2PAK/TO-220FP MDMESH POWER MOSFET The STP11NM60 is an N-channel Power MOSFET manufactured by STMicroelectronics (ST).  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 11A  
- **Pulsed Drain Current (IDM):** 44A  
- **Power Dissipation (Ptot):** 150W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.38Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 1350pF  
- **Output Capacitance (Coss):** 300pF  
- **Reverse Transfer Capacitance (Crss):** 50pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Descriptions & Features:**  
- **Technology:** MDmesh™ (ST’s advanced high-voltage MOSFET technology)  
- **Low Gate Charge:** Improves switching efficiency  
- **Fast Switching:** Optimized for high-frequency applications  
- **Avalanche Rugged:** High energy capability  
- **Low On-Resistance:** Reduces conduction losses  
- **Applications:** Used in power supplies, motor control, lighting, and industrial applications  

The device is available in a TO-220 package.

Application Scenarios & Design Considerations

N-CHANNEL 600V 0.4 OHM 11A TO-220/D2PAK/I2PAK/TO-220FP MDMESH POWER MOSFET

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