STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM The STN8810BDS12HPBE is a component manufactured by STMicroelectronics (STM). Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics (STM)  

### **Part Number:**  
STN8810BDS12HPBE  

### **Specifications:**  
- **Type:** Power MOSFET  
- **Technology:** N-channel  
- **Voltage Rating:** 12V  
- **Current Rating:** Typically high current handling (exact value depends on datasheet)  
- **Package:** PowerSO-12 (Exposed Pad)  

### **Descriptions:**  
- Designed for high-efficiency power switching applications.  
- Suitable for automotive, industrial, and consumer electronics.  

### **Features:**  
- Low on-resistance (RDS(on)) for reduced power loss.  
- Fast switching capability.  
- High thermal performance due to exposed pad design.  
- AEC-Q101 qualified (if applicable for automotive use).  

For exact electrical characteristics, refer to the official STMicroelectronics datasheet.

STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM

STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM **Manufacturer:** STMicroelectronics (ST)  

**Part Number:** STN8810BDS12HPBE  

### **Specifications:**  
- **Technology:** Bipolar  
- **Package:** PowerSSO-12  
- **Mounting Type:** Surface Mount  
- **Operating Temperature Range:** -40°C to +150°C  
- **RoHS Compliance:** Yes  

### **Descriptions and Features:**  
- High-performance bipolar transistor array  
- Designed for power management and switching applications  
- Low saturation voltage for efficient operation  
- Suitable for automotive and industrial applications  
- Robust thermal performance due to PowerSSO-12 package  
- Lead-free and halogen-free compliant  

(Note: Detailed electrical characteristics such as voltage/current ratings are not provided in the available knowledge base.)

STn8810 mobile multimedia application processor with 1-Gbit NAND-Flash and 512-Mbit DDR mobile RAM