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STI10N62K3 from ST,ST Microelectronics

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STI10N62K3

Manufacturer: ST

N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3?

Partnumber Manufacturer Quantity Availability
STI10N62K3 ST 1000 In Stock

Description and Introduction

N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3? The STI10N62K3 is a power MOSFET manufactured by STMicroelectronics (ST).  

### **Specifications:**  
- **Type:** N-channel MOSFET  
- **Voltage Rating (VDSS):** 620V  
- **Current Rating (ID):** 10A  
- **Power Dissipation (PD):** 150W  
- **On-Resistance (RDS(on)):** 0.62Ω (typical)  
- **Gate Threshold Voltage (VGS(th)):** 3V (typical)  
- **Input Capacitance (Ciss):** 1200pF (typical)  
- **Package:** TO-220  

### **Descriptions and Features:**  
- Designed for high-voltage, high-speed switching applications.  
- Low gate charge for improved efficiency in switching circuits.  
- Avalanche ruggedness for enhanced reliability in harsh conditions.  
- Suitable for power supplies, motor control, and lighting applications.  

This MOSFET is optimized for performance in industrial and consumer electronics requiring efficient power handling.

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