35 A The STGW35NC120HD is an IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics.
### **Specifications:**
- **Voltage Rating (VCES):** 1200V
- **Current Rating (IC @25°C):** 35A
- **Current Rating (IC @100°C):** 20A
- **Power Dissipation (Ptot):** 200W
- **Gate-Emitter Voltage (VGE):** ±20V
- **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.85V (typical)
- **Turn-On Delay Time (td(on)):** 25ns (typical)
- **Turn-Off Delay Time (td(off)):** 110ns (typical)
- **Operating Junction Temperature (Tj):** -40°C to +150°C
- **Package:** TO-247
### **Descriptions and Features:**
- **High Voltage Capability:** Suitable for high-power switching applications up to 1200V.
- **Low Saturation Voltage:** Ensures reduced conduction losses.
- **Fast Switching Speed:** Optimized for high-frequency operation.
- **Temperature Stability:** Designed for reliable performance across a wide temperature range.
- **Robust Construction:** TO-247 package provides mechanical strength and efficient heat dissipation.
- **Applications:** Used in power converters, motor drives, UPS systems, and industrial inverters.
This IGBT is designed for high-efficiency power switching in demanding environments.
