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STGP6NC60HD from ST,ST Microelectronics

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STGP6NC60HD

Manufacturer: ST

Very fast "H" series

Partnumber Manufacturer Quantity Availability
STGP6NC60HD ST 40 In Stock

Description and Introduction

Very fast "H" series The STGP6NC60HD is an IGBT (Insulated Gate Bipolar Transistor) manufactured by STMicroelectronics. Below are the factual details about this component:

### **Manufacturer:**  
STMicroelectronics (ST)  

### **Specifications:**  
1. **Voltage Rating (VCES):** 600V  
2. **Current Rating (IC @25°C):** 6A  
3. **Power Dissipation (Ptot):** 40W  
4. **Gate-Emitter Voltage (VGE):** ±20V  
5. **Collector-Emitter Saturation Voltage (VCE(sat)):** 1.7V (typical)  
6. **Switching Speed:** Fast switching with low switching losses  
7. **Operating Temperature Range:** -40°C to +150°C  
8. **Package:** TO-220 (Through-hole mounting)  

### **Descriptions:**  
- The STGP6NC60HD is a high-speed, low-loss IGBT designed for power switching applications.  
- It combines the advantages of MOSFET input characteristics and bipolar output characteristics.  
- Suitable for high-efficiency power conversion systems.  

### **Features:**  
- **Low Saturation Voltage:** Ensures reduced conduction losses.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **High Input Impedance:** Allows easy drive with standard logic circuits.  
- **Built-in Fast Recovery Diode:** Enhances switching performance and reliability.  
- **Robust and Reliable:** Designed for industrial and automotive applications.  

This information is based on the manufacturer's datasheet for the STGP6NC60HD.

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