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STF7NM80 from ST,ST Microelectronics

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13.672ms

STF7NM80

Manufacturer: ST

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220FP package

Partnumber Manufacturer Quantity Availability
STF7NM80 ST 850 In Stock

Description and Introduction

N-channel 800 V, 0.95 Ohm, 6.5 A MDmesh(TM) Power MOSFET in TO-220FP package The STF7NM80 is an N-channel MOSFET manufactured by STMicroelectronics. Below are the factual details from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 800V  
- **Continuous Drain Current (ID):** 7A  
- **Pulsed Drain Current (IDM):** 28A  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.85Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 1200pF (typ)  
- **Output Capacitance (Coss):** 180pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 30pF (typ)  
- **Turn-On Delay Time (td(on)):** 15ns (typ)  
- **Turn-Off Delay Time (td(off)):** 60ns (typ)  
- **Operating Temperature Range:** -55°C to 150°C  

### **Description:**  
The STF7NM80 is a high-voltage N-channel Power MOSFET designed for switching applications. It features low gate charge, fast switching speed, and high ruggedness, making it suitable for power supplies, motor control, and lighting applications.  

### **Features:**  
- **High Voltage Capability (800V)**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Performance**  
- **Low Gate Charge**  
- **Avalanche Energy Specified**  
- **100% Avalanche Tested**  
- **TO-220FP Package**  

This information is strictly based on the manufacturer's datasheet.

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