N-channel 500 V, 0.162 Ohm, 17 A, TO-220FP MDmesh(TM) II Power MOSFET The STF23NM50N is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 23A (at 25°C)
- **Pulsed Drain Current (IDM):** 92A
- **Power Dissipation (PD):** 190W (at 25°C)
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.19Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 1500pF (typ)
- **Output Capacitance (Coss):** 300pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 15ns (typ)
- **Turn-Off Delay Time (td(off)):** 60ns (typ)
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-220FP (isolated tab)
### **Description:**
The STF23NM50N is a high-voltage N-channel MOSFET designed for high-efficiency power switching applications. It features low on-resistance, fast switching performance, and high ruggedness, making it suitable for power supplies, motor control, and industrial applications.
### **Features:**
- **Low gate charge** for improved switching efficiency
- **Low RDS(on)** for reduced conduction losses
- **High dv/dt capability** for robustness in switching applications
- **100% avalanche tested** for reliability
- **Isolated package (TO-220FP)** for simplified mounting
This information is based on the manufacturer's datasheet. For detailed application guidelines, refer to the official STMicroelectronics documentation.
