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STF18NM60N from ST,ST Microelectronics

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15.625ms

STF18NM60N

Manufacturer: ST

N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP

Partnumber Manufacturer Quantity Availability
STF18NM60N ST 12800 In Stock

Description and Introduction

N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP The STF18NM60N is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are its key specifications, descriptions, and features:

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 18A  
- **Pulsed Drain Current (IDM):** 72A  
- **Power Dissipation (PD):** 170W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.19Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 300pF  
- **Reverse Transfer Capacitance (Crss):** 60pF  
- **Turn-On Delay Time (td(on)):** 15ns  
- **Turn-Off Delay Time (td(off)):** 70ns  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Description:**  
The STF18NM60N is a high-voltage, high-current MOSFET designed for power switching applications. It features low on-resistance and fast switching performance, making it suitable for high-efficiency power conversion systems.  

### **Features:**  
- **High Voltage Capability (600V)**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Speed**  
- **Improved dv/dt Capability**  
- **Avalanche Ruggedness**  
- **100% Avalanche Tested**  
- **Low Gate Charge**  
- **TO-220FP Package (Fully Insulated)**  

The STF18NM60N is commonly used in power supplies, motor control, lighting, and industrial applications.

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