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STF15NM60ND from ST,ST Microelectronics

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15.625ms

STF15NM60ND

Manufacturer: ST

N-channel 600 V

Partnumber Manufacturer Quantity Availability
STF15NM60ND ST 550 In Stock

Description and Introduction

N-channel 600 V The **STF15NM60ND** is a **N-channel MOSFET** manufactured by **STMicroelectronics**. Below are the specifications, descriptions, and features based on the manufacturer's datasheet:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 600V  
- **Continuous Drain Current (ID):** 15A  
- **Pulsed Drain Current (IDM):** 60A  
- **Power Dissipation (PD):** 190W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.35Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 1800pF (typ)  
- **Output Capacitance (Coss):** 300pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 15ns (typ)  
- **Turn-Off Delay Time (td(off)):** 60ns (typ)  
- **Operating Temperature Range:** -55°C to 150°C  

### **Description:**
The **STF15NM60ND** is a **high-voltage, fast-switching N-channel MOSFET** designed for high-efficiency power applications. It is part of STMicroelectronics' **MDmesh™** series, which features low on-resistance and high switching performance.  

### **Features:**
- **MDmesh™ Technology:** Provides low conduction losses and high switching efficiency.  
- **Avalanche-Rugged:** Capable of handling high-energy avalanche conditions.  
- **Fast Switching:** Optimized for high-frequency applications.  
- **Low Gate Charge (QG):** Reduces driving losses.  
- **Low Input Capacitance:** Enhances switching performance.  
- **100% Avalanche Tested:** Ensures reliability in harsh conditions.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly.  

This MOSFET is commonly used in **switched-mode power supplies (SMPS), motor control, lighting, and industrial applications**.  

For detailed information, refer to the official **STMicroelectronics datasheet**.

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