N-channel 600V The **STF11NM60ND** is a **N-channel MOSFET** manufactured by **STMicroelectronics (ST)**.
### **Key Specifications:**
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 11A
- **Pulsed Drain Current (IDM):** 44A
- **Power Dissipation (PD):** 190W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.45Ω (max) @ VGS = 10V
- **Gate Charge (Qg):** 40nC (typ)
- **Input Capacitance (Ciss):** 1500pF (typ)
- **Output Capacitance (Coss):** 300pF (typ)
- **Reverse Transfer Capacitance (Crss):** 60pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Operating Junction Temperature (TJ):** -55°C to 150°C
### **Description:**
The **STF11NM60ND** is a high-voltage **Power MOSFET** designed for **switching applications** in power supplies, motor control, and other high-efficiency circuits. It features **low on-resistance**, **fast switching speeds**, and **high ruggedness**.
### **Features:**
- **High voltage capability (600V)**
- **Low gate charge** for fast switching
- **Low on-resistance** for reduced conduction losses
- **Avalanche ruggedness**
- **100% avalanche tested**
- **Lead-free and RoHS compliant**
The device is packaged in **TO-220FP (isolated tab)** for better thermal performance and isolation.
(Data sourced from STMicroelectronics' official documentation.)
