N-CHANNEL 24V The STD90NH02L-T4 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Part Number:** STD90NH02L-T4
- **Type:** N-Channel Power MOSFET
- **Technology:** STripFET™ II
- **Drain-Source Voltage (VDS):** 25V
- **Continuous Drain Current (ID):** 90A
- **Pulsed Drain Current (IDM):** 360A
- **Power Dissipation (PD):** 200W
- **Gate-Source Voltage (VGS):** ±20V
- **RDS(on) (Max) at VGS = 10V:** 2.0mΩ
- **RDS(on) (Max) at VGS = 4.5V:** 2.8mΩ
- **Threshold Voltage (VGS(th)):** 1.0V (Min) – 2.5V (Max)
- **Total Gate Charge (Qg):** 110nC (Typ)
- **Input Capacitance (Ciss):** 4500pF (Typ)
- **Output Capacitance (Coss):** 1100pF (Typ)
- **Reverse Transfer Capacitance (Crss):** 300pF (Typ)
- **Turn-On Delay Time (td(on)):** 12ns (Typ)
- **Turn-Off Delay Time (td(off)):** 30ns (Typ)
- **Operating Junction Temperature (TJ):** -55°C to +175°C
- **Package:** TO-252 (DPAK)
### **Description:**
The STD90NH02L-T4 is a high-performance N-Channel MOSFET designed for low-voltage, high-current applications. It features STMicroelectronics' STripFET™ II technology, which provides low on-resistance and high efficiency in power switching applications.
### **Features:**
- **Low RDS(on):** Ensures minimal conduction losses.
- **High Current Capability:** Supports up to 90A continuous drain current.
- **Fast Switching Speed:** Optimized for high-frequency applications.
- **Avalanche Ruggedness:** Enhanced reliability under harsh conditions.
- **Low Gate Charge:** Reduces switching losses.
- **Thermal Performance:** Suitable for high-power applications.
This information is based solely on the manufacturer's datasheet and technical documentation.
