N-CHANNEL 100V The STD6NF10 is an N-channel Power MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features as provided in Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 100V
- **Continuous Drain Current (ID):** 6A
- **Pulsed Drain Current (IDM):** 24A
- **Power Dissipation (Ptot):** 40W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.45Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)
- **Input Capacitance (Ciss):** 400pF (typ)
- **Output Capacitance (Coss):** 100pF (typ)
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Junction Temperature (Tj):** -55°C to 150°C
### **Description:**
The STD6NF10 is a Power MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching performance, making it suitable for power management in DC-DC converters, motor control, and other power applications.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **Avalanche Energy Specified:** Ensures robustness in inductive load conditions.
- **Logic-Level Gate Drive:** Compatible with 5V and 10V gate drive signals.
- **TO-252 (DPAK) Package:** Provides efficient thermal performance.
This information is based on the manufacturer's datasheet and technical documentation.
