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STD5NM50T4 from STM,ST Microelectronics

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STD5NM50T4

Manufacturer: STM

N-CHANNEL 550V @Tjmax

Partnumber Manufacturer Quantity Availability
STD5NM50T4 STM 900 In Stock

Description and Introduction

N-CHANNEL 550V @Tjmax The STD5NM50T4 is a power MOSFET manufactured by STMicroelectronics (STM). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** STMicroelectronics (STM)  
- **Part Number:** STD5NM50T4  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 500V  
- **Continuous Drain Current (ID):** 4.5A (at 25°C)  
- **Pulsed Drain Current (IDM):** 18A  
- **Power Dissipation (PD):** 80W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-State Resistance (RDS(on)):** 0.75Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 500pF (typical)  
- **Output Capacitance (Coss):** 80pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 15pF (typical)  
- **Turn-On Delay Time (td(on)):** 10ns (typical)  
- **Turn-Off Delay Time (td(off)):** 35ns (typical)  
- **Operating Temperature Range:** -55°C to 150°C  
- **Package:** DPAK (TO-252)  

### **Description:**  
The STD5NM50T4 is a high-voltage N-channel MOSFET designed for power switching applications. It features low on-state resistance, fast switching performance, and high efficiency, making it suitable for power supplies, motor control, and other high-voltage applications.  

### **Features:**  
- **High Voltage Capability (500V)**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Speed**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **100% Avalanche Tested**  
- **Lead-Free and RoHS Compliant**  

This information is based solely on the manufacturer's datasheet and specifications.

Application Scenarios & Design Considerations

N-CHANNEL 550V @Tjmax

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