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STD5NM50-1 from ST,ST Microelectronics

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STD5NM50-1

Manufacturer: ST

N-CHANNEL 500V

Partnumber Manufacturer Quantity Availability
STD5NM50-1,STD5NM501 ST 12500 In Stock

Description and Introduction

N-CHANNEL 500V The STD5NM50-1 is an N-channel MOSFET manufactured by STMicroelectronics. Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**
- **Drain-Source Voltage (VDS):** 500V  
- **Continuous Drain Current (ID):** 4.5A (at 25°C)  
- **Pulsed Drain Current (IDM):** 18A  
- **Power Dissipation (PD):** 150W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±30V  
- **RDS(on) (Drain-Source On-Resistance):** 0.85Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 900pF (typical)  
- **Output Capacitance (Coss):** 150pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 30pF (typical)  
- **Turn-On Delay Time (td(on)):** 15ns (typical)  
- **Turn-Off Delay Time (td(off)):** 60ns (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Description:**
The STD5NM50-1 is a high-voltage N-channel MOSFET designed for switching applications. It features low on-resistance, fast switching speeds, and high ruggedness, making it suitable for power supplies, motor control, and lighting applications.

### **Features:**
- **High Voltage Capability (500V)**  
- **Low On-Resistance (RDS(on))**  
- **Fast Switching Performance**  
- **Avalanche Energy Specified**  
- **Improved dv/dt Capability**  
- **100% Avalanche Tested**  
- **TO-220 Package**  

This information is based on STMicroelectronics' official datasheet for the STD5NM50-1.

Application Scenarios & Design Considerations

N-CHANNEL 500V

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