N-CHANNEL 500V The STD5NK50ZT4 is a power MOSFET manufactured by STMicroelectronics (STM). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics (STM)
- **Type:** N-channel MOSFET
- **Technology:** MDmesh™ II
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 4A (at 25°C)
- **Pulsed Drain Current (IDM):** 16A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) to 5V (max)
- **Input Capacitance (Ciss):** 300pF (typ)
- **Output Capacitance (Coss):** 30pF (typ)
- **Reverse Transfer Capacitance (Crss):** 5pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 40ns (typ)
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-252 (DPAK)
### **Descriptions:**
- The STD5NK50ZT4 is a high-voltage N-channel MOSFET designed for switching applications.
- It utilizes STMicroelectronics' MDmesh™ II technology, which provides low on-resistance and high switching performance.
- Suitable for power supplies, lighting, motor control, and other high-efficiency applications.
### **Features:**
- **Low Gate Charge:** Enhances switching efficiency.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Improves performance in high-frequency applications.
- **Avalanche Rugged:** Ensures reliability under high-energy conditions.
- **100% Avalanche Tested:** Guarantees robustness in harsh environments.
This information is based solely on the manufacturer's datasheet and technical documentation.
