N-CHANNEL 200V The STD5N20-T4 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Part Number:** STD5N20-T4
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 200V
- **Continuous Drain Current (ID):** 5A
- **Pulsed Drain Current (IDM):** 20A
- **Power Dissipation (PD):** 50W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.8Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)
- **Input Capacitance (Ciss):** 300pF (typ)
- **Output Capacitance (Coss):** 60pF (typ)
- **Reverse Transfer Capacitance (Crss):** 20pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-252 (DPAK)
### **Descriptions:**
- The STD5N20-T4 is a high-voltage N-channel MOSFET designed for switching applications.
- It is optimized for low on-resistance and fast switching performance.
- Suitable for power management, motor control, and DC-DC converter applications.
### **Features:**
- **High Voltage Capability:** Supports up to 200V drain-source voltage.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching:** Optimized for high-speed switching applications.
- **Avalanche Rugged:** Enhanced reliability under harsh conditions.
- **Thermal Performance:** TO-252 package provides efficient heat dissipation.
This information is based on the manufacturer's datasheet and technical documentation.
