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STD4NS25 from ST,ST Microelectronics

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STD4NS25

Manufacturer: ST

N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFET

Partnumber Manufacturer Quantity Availability
STD4NS25 ST 30375 In Stock

Description and Introduction

N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFET The STD4NS25 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** STMicroelectronics  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 250V  
- **Continuous Drain Current (ID):** 4A  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (PD):** 40W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-State Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 300pF  
- **Output Capacitance (Coss):** 80pF  
- **Reverse Transfer Capacitance (Crss):** 20pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Rise Time (tr):** 20ns  
- **Fall Time (tf):** 20ns  
- **Package:** TO-252 (DPAK)  

### **Descriptions & Features:**  
- Designed for high-voltage, high-speed switching applications.  
- Low gate charge for improved efficiency.  
- Avalanche ruggedness for enhanced reliability.  
- Suitable for power management, motor control, and DC-DC converters.  
- Compliant with RoHS standards.  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

N-CHANNEL 250V 0.9 OHM 4A DPAK/IPAK MESH OVERLAY MOSFET

Alternative Part Number

  • IRF540N --: Widely available N-channel MOSFET with 100V/33A rating, higher voltage and current margin than the 250V/4A STD4NS25, suitable for similar switching applications.
  • FQP4N25 --: 250V N-channel MOSFET in TO-220 with comparable 4A current rating, direct functional replacement for the STD4NS25 in most circuits.
  • 2N60L --: 600V N-channel MOSFET with low on-resistance, provides higher voltage margin and is a cost-effective alternative for switching and power supply designs.

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