N-CHANNEL 500V The STD4NC50 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 500V
- **Continuous Drain Current (ID):** 4A
- **Pulsed Drain Current (IDM):** 16A
- **Power Dissipation (Ptot):** 50W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)
- **Input Capacitance (Ciss):** 300pF (typ)
- **Output Capacitance (Coss):** 60pF (typ)
- **Reverse Transfer Capacitance (Crss):** 15pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 40ns (typ)
- **Operating Junction Temperature (Tj):** -55°C to 150°C
### **Description:**
The STD4NC50 is an N-channel power MOSFET designed for high-voltage, high-speed switching applications. It is optimized for efficiency and reliability in power management circuits, motor control, and switching power supplies.
### **Features:**
- **High Voltage Capability:** 500V breakdown voltage for robust performance.
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Suitable for high-frequency applications.
- **Avalanche Ruggedness:** Enhanced reliability under inductive loads.
- **TO-220 Package:** Provides efficient thermal dissipation.
- **Zener-Protected Gate:** Improves robustness against voltage spikes.
This information is based on the manufacturer's datasheet. For detailed application notes, refer to STMicroelectronics' official documentation.
