N-CHANNEL 400V 1.47 OHM 4A DPAK/IPAK POWERMESH MOSFET The STD4NB40-T4 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Type:** N-Channel Power MOSFET
- **Technology:** MDmesh™
- **Drain-Source Voltage (VDSS):** 400V
- **Continuous Drain Current (ID):** 4A
- **Pulsed Drain Current (IDM):** 16A
- **Power Dissipation (PD):** 45W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) to 5V (max)
- **Input Capacitance (Ciss):** 200pF (typ)
- **Output Capacitance (Coss):** 30pF (typ)
- **Reverse Transfer Capacitance (Crss):** 10pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** TO-252 (DPAK)
### **Description:**
The STD4NB40-T4 is a high-voltage N-Channel MOSFET designed for power switching applications. It features ST's MDmesh™ technology, which provides low on-resistance and high switching performance. The device is suitable for applications such as power supplies, motor control, and lighting.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **High Switching Speed:** Optimized for fast switching applications.
- **Avalanche Rugged:** Enhanced reliability under high-energy conditions.
- **Low Gate Charge:** Reduces driving losses.
- **Improved dv/dt Capability:** Ensures robustness in high-frequency applications.
- **Lead-Free and RoHS Compliant:** Meets environmental standards.
This information is strictly based on the manufacturer's datasheet and technical documentation.
