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STD35NF06T4 from ST,ST Microelectronics

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STD35NF06T4

Manufacturer: ST

N-CHANNEL 60V 0.018 OHM 55A

Partnumber Manufacturer Quantity Availability
STD35NF06T4 ST 25200 In Stock

Description and Introduction

N-CHANNEL 60V 0.018 OHM 55A The STD35NF06T4 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Type:** N-channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 35A  
- **Pulsed Drain Current (IDM):** 140A  
- **Power Dissipation (PD):** 125W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.028Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 1800pF  
- **Output Capacitance (Coss):** 600pF  
- **Reverse Transfer Capacitance (Crss):** 100pF  
- **Turn-On Delay Time (td(on)):** 10ns  
- **Turn-Off Delay Time (td(off)):** 35ns  
- **Operating Junction Temperature (TJ):** -55°C to 175°C  

### **Description:**  
The STD35NF06T4 is a high-performance N-channel MOSFET designed for power switching applications. It features low on-resistance, fast switching speeds, and high current capability, making it suitable for DC-DC converters, motor control, and power management circuits.  

### **Features:**  
- Low gate charge for improved switching efficiency  
- Low RDS(on) for reduced conduction losses  
- Avalanche ruggedness for enhanced reliability  
- 100% avalanche tested  
- Lead-free and RoHS compliant  

This information is based solely on the manufacturer's datasheet.

Application Scenarios & Design Considerations

N-CHANNEL 60V 0.018 OHM 55A

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