N-CHANNEL 600V The STD1NK60T4 is a power MOSFET manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)
- **Part Number:** STD1NK60T4
- **Type:** N-Channel MOSFET
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 1A
- **Pulsed Drain Current (IDM):** 4A
- **Power Dissipation (PD):** 20W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 5.5Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) to 5V (max)
- **Input Capacitance (Ciss):** 50pF (typ)
- **Output Capacitance (Coss):** 10pF (typ)
- **Reverse Transfer Capacitance (Crss):** 5pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 35ns (typ)
- **Operating Temperature Range:** -55°C to +150°C
- **Package:** DPAK (TO-252)
### **Descriptions:**
- The STD1NK60T4 is a high-voltage N-channel MOSFET designed for switching applications.
- It is optimized for low gate charge and fast switching performance.
- Suitable for power management, DC-DC converters, and motor control applications.
### **Features:**
- **Low Gate Charge:** Ensures efficient switching performance.
- **Fast Switching Speed:** Reduces switching losses.
- **High Voltage Capability:** Supports up to 600V.
- **Avalanche Ruggedness:** Enhances reliability in harsh conditions.
- **Low On-Resistance:** Improves efficiency in conduction.
- **Surface-Mount Package (DPAK):** Suitable for automated assembly.
This information is based on the manufacturer's datasheet and technical documentation.
