N-CHANNEL 30V 0.038 OHM 17A DPAK/IPAK STRIFET POWER MOSFET The STD17NF03LT4 is a power MOSFET manufactured by STMicroelectronics (ST). Below are the specifications, descriptions, and features based on the factual information available:
### **Specifications:**
- **Manufacturer:** STMicroelectronics (ST)
- **Type:** N-channel Power MOSFET
- **Technology:** STripFET™ II
- **Drain-Source Voltage (VDS):** 30V
- **Continuous Drain Current (ID):** 17A
- **Pulsed Drain Current (IDM):** 68A
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 35W
- **RDS(on) (Max):** 0.028Ω (at VGS = 10V)
- **RDS(on) (Max):** 0.035Ω (at VGS = 4.5V)
- **Threshold Voltage (VGS(th)):** 1V (Min), 2V (Max)
- **Input Capacitance (Ciss):** 1100pF
- **Output Capacitance (Coss):** 300pF
- **Reverse Transfer Capacitance (Crss):** 60pF
- **Turn-On Delay Time (td(on)):** 10ns
- **Turn-Off Delay Time (td(off)):** 30ns
- **Operating Temperature Range:** -55°C to +175°C
- **Package:** TO-252 (DPAK)
### **Descriptions:**
The STD17NF03LT4 is a high-performance N-channel MOSFET designed for low-voltage, high-efficiency power switching applications. It features ST's STripFET™ II technology, which provides low on-resistance and high current capability, making it suitable for DC-DC converters, motor control, and power management circuits.
### **Features:**
- Low on-resistance (RDS(on)) for reduced conduction losses
- High current handling capability
- Fast switching performance
- Low gate charge for improved efficiency
- Avalanche ruggedness
- Lead-free and RoHS compliant
This information is based on ST's official datasheet and technical documentation. For detailed application notes, refer to the manufacturer’s datasheet.
