N-CHANNEL 100V The STD15NF10 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Type:** N-Channel Power MOSFET
- **Drain-Source Voltage (VDSS):** 100V
- **Continuous Drain Current (ID):** 15A
- **Pulsed Drain Current (IDM):** 60A
- **Power Dissipation (PD):** 75W
- **Gate-Source Voltage (VGS):** ±20V
- **On-Resistance (RDS(on)):** 0.15Ω (max) at VGS = 10V
- **Threshold Voltage (VGS(th)):** 2-4V
- **Input Capacitance (Ciss):** 800pF (typical)
- **Output Capacitance (Coss):** 150pF (typical)
- **Reverse Transfer Capacitance (Crss):** 50pF (typical)
- **Turn-On Delay Time (td(on)):** 10ns (typical)
- **Turn-Off Delay Time (td(off)):** 35ns (typical)
- **Operating Temperature Range:** -55°C to 175°C
### **Descriptions:**
- The STD15NF10 is a high-performance N-channel MOSFET designed for power switching applications.
- It features low on-resistance and fast switching characteristics, making it suitable for high-efficiency power conversion.
- The device is housed in a TO-252 (DPAK) package, providing good thermal performance and ease of mounting.
### **Features:**
- **Low On-Resistance:** Minimizes conduction losses.
- **Fast Switching Speed:** Enhances efficiency in high-frequency applications.
- **High Current Handling:** Supports up to 15A continuous drain current.
- **Avalanche Energy Specified:** Ensures robustness in inductive load switching.
- **Logic-Level Gate Drive:** Can be driven with standard logic-level signals (though optimal performance is at 10V VGS).
This information is based on the manufacturer's datasheet and technical documentation.
