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STD150N3LLH6 from ST,ST Microelectronics

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STD150N3LLH6

Manufacturer: ST

N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET

Partnumber Manufacturer Quantity Availability
STD150N3LLH6 ST 20 In Stock

Description and Introduction

N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET The **STD150N3LLH6** is a **N-channel 30 V, 0.7 mΩ typ., 150 A STripFET II Power MOSFET** manufactured by **STMicroelectronics**.  

### **Key Specifications:**  
- **Drain-Source Voltage (VDS):** 30 V  
- **Continuous Drain Current (ID):** 150 A  
- **RDS(on) (max) @ VGS = 10 V:** 0.85 mΩ  
- **RDS(on) (typ) @ VGS = 10 V:** 0.7 mΩ  
- **Power Dissipation (PD):** 300 W  
- **Gate-Source Voltage (VGS):** ±20 V  
- **Operating Junction Temperature (TJ):** -55°C to +175°C  

### **Features:**  
- **Low On-Resistance (RDS(on)):** Minimizes conduction losses.  
- **High Current Capability:** Supports up to 150 A continuous drain current.  
- **Optimized for High Efficiency:** Suitable for synchronous rectification in DC-DC converters.  
- **Avalanche-Rugged:** Enhanced reliability under high-energy conditions.  
- **Low Gate Charge (QG):** Improves switching performance.  
- **STripFET II Technology:** Provides high power density and thermal efficiency.  
- **TO-LL Package:** Optimized for high-current applications with low thermal resistance.  

This MOSFET is commonly used in **power management, motor control, and high-efficiency switching applications**.

Application Scenarios & Design Considerations

N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET

Alternative Part Number

  • IPB017N03LG --: N-channel 30V logic-level MOSFET in TO-252/DPAK with very low RDS(on), close electrical match to the 30V ST part.
  • BSC0902NSI --: 30V N-channel MOSFET with low on-resistance and similar current rating, suitable drop-in for low-voltage switching applications.
  • CSD17501Q5A --: 30V NexFET power MOSFET with low RDS(on) and comparable current handling, a viable alternative for power switching designs.

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