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STD12NE06 from ST,ST Microelectronics

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STD12NE06

Manufacturer: ST, ST原厂

N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET

Partnumber Manufacturer Quantity Availability
STD12NE06 ST, ST原厂 29350 In Stock

Description and Introduction

N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET The STD12NE06 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:

### **Manufacturer:**  
STMicroelectronics  

### **Specifications:**  
- **Type:** N-Channel Power MOSFET  
- **Drain-Source Voltage (VDSS):** 60V  
- **Continuous Drain Current (ID):** 12A  
- **Pulsed Drain Current (IDM):** 48A  
- **Power Dissipation (PD):** 50W  
- **Gate-Source Voltage (VGS):** ±20V  
- **On-Resistance (RDS(on)):** 0.12Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V (min), 4V (max)  
- **Input Capacitance (Ciss):** 600pF (typ)  
- **Output Capacitance (Coss):** 150pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 50pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 40ns (typ)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
The STD12NE06 is a high-performance N-channel power MOSFET designed for switching applications. It features low on-resistance, fast switching speeds, and high efficiency, making it suitable for power management in various electronic circuits.  

### **Features:**  
- Low gate charge  
- High current capability  
- Low RDS(on)  
- Fast switching performance  
- Avalanche ruggedness  
- 100% tested for RDS(on)  

### **Package:**  
- **TO-252 (DPAK)**  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET

Alternative Part Number

  • IRFZ44N --: Widely available 55V N-channel MOSFET with comparable RDS(on) and current rating, suitable drop-in replacement for low-voltage switching applications.
  • FQP30N06L --: 60V logic-level N-channel MOSFET with similar voltage and current ratings, good alternative for switching and power management circuits.
  • IRLZ44N --: Logic-level 55V N-channel MOSFET offering low gate drive requirements and comparable performance to the original device.

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