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STB9NK60ZT4 from ST,ST Microelectronics

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STB9NK60ZT4

Manufacturer: ST

N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET

Partnumber Manufacturer Quantity Availability
STB9NK60ZT4 ST 1000 In Stock

Description and Introduction

N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET The **STB9NK60ZT4** is a power MOSFET manufactured by **STMicroelectronics**.  

### **Specifications:**  
- **Type:** N-channel MOSFET  
- **Drain-Source Voltage (VDS):** 600V  
- **Continuous Drain Current (ID):** 8A  
- **Pulsed Drain Current (IDM):** 32A  
- **Power Dissipation (PD):** 45W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 0.65Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min) - 5V (max)  
- **Input Capacitance (Ciss):** 900pF (typ)  
- **Output Capacitance (Coss):** 130pF (typ)  
- **Reverse Transfer Capacitance (Crss):** 25pF (typ)  
- **Turn-On Delay Time (td(on)):** 10ns (typ)  
- **Turn-Off Delay Time (td(off)):** 60ns (typ)  
- **Package:** TO-263 (D2PAK)  

### **Description:**  
The **STB9NK60ZT4** is a high-voltage N-channel MOSFET designed for high-efficiency switching applications. It features low gate charge and low on-resistance, making it suitable for power supplies, motor control, and lighting applications.  

### **Features:**  
- **High voltage capability (600V)**  
- **Low gate charge for fast switching**  
- **Low on-resistance for reduced conduction losses**  
- **Avalanche ruggedness**  
- **100% avalanche tested**  
- **Pb-free and RoHS compliant**  

This MOSFET is optimized for use in power conversion and switching circuits where high efficiency and reliability are required.

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