N-CHANNEL 650V@Tjmax The **STB8NM60T4** is an N-channel MOSFET manufactured by **STMicroelectronics**.
### **Specifications:**
- **Drain-Source Voltage (VDSS):** 600V
- **Continuous Drain Current (ID):** 7.5A
- **Pulsed Drain Current (IDM):** 30A
- **Power Dissipation (PD):** 45W
- **Gate-Source Voltage (VGS):** ±30V
- **On-Resistance (RDS(on)):** 0.65Ω (max) @ VGS = 10V
- **Threshold Voltage (VGS(th)):** 3V (min) / 5V (max)
- **Input Capacitance (Ciss):** 600pF (typ)
- **Output Capacitance (Coss):** 90pF (typ)
- **Reverse Transfer Capacitance (Crss):** 15pF (typ)
- **Turn-On Delay Time (td(on)):** 10ns (typ)
- **Turn-Off Delay Time (td(off)):** 50ns (typ)
- **Operating Temperature Range:** -55°C to 150°C
- **Package:** TO-263 (D2PAK)
### **Description:**
The STB8NM60T4 is a high-voltage MOSFET designed for **switching applications**, offering **low on-resistance** and **fast switching performance**. It is suitable for **power supplies, motor control, and lighting applications**.
### **Features:**
- **Low gate charge** for improved efficiency
- **Avalanche ruggedness** for reliability in harsh conditions
- **100% avalanche tested** for robustness
- **Low intrinsic capacitances** for reduced switching losses
- **Lead-free and RoHS compliant**
This MOSFET is optimized for **high-efficiency power conversion** in industrial and consumer applications.
