P-CHANNEL 55V The STB80PF55T4 is a power MOSFET manufactured by STMicroelectronics. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** STMicroelectronics
- **Part Number:** STB80PF55T4
- **Type:** N-channel Power MOSFET
- **Technology:** MDmesh™ K5
- **Drain-Source Voltage (VDSS):** 55V
- **Continuous Drain Current (ID):** 80A
- **Pulsed Drain Current (IDM):** 320A
- **Power Dissipation (Ptot):** 300W
- **Gate-Source Voltage (VGS):** ±20V
- **RDS(on) (Max):** 4.5mΩ at VGS = 10V
- **RDS(on) (Max):** 5.5mΩ at VGS = 4.5V
- **Threshold Voltage (VGS(th)):** 2.5V (Typical)
- **Total Gate Charge (Qg):** 110nC (Typical)
- **Input Capacitance (Ciss):** 6000pF (Typical)
- **Package:** TO-263 (D2PAK)
### **Descriptions:**
- The STB80PF55T4 is a high-performance N-channel Power MOSFET designed for high-efficiency power switching applications.
- It utilizes STMicroelectronics' MDmesh™ K5 technology, which provides low on-resistance and high switching performance.
- Suitable for applications such as DC-DC converters, motor control, and power management in automotive and industrial systems.
### **Features:**
- **Low RDS(on):** Ensures minimal conduction losses.
- **High Current Capability:** Supports high-power applications with a continuous drain current of 80A.
- **Fast Switching:** Optimized for high-frequency switching applications.
- **Avalanche Rated:** Robust against high-energy transients.
- **Low Gate Charge:** Reduces switching losses.
- **Thermal Efficiency:** TO-263 package provides good thermal performance.
This information is based on the manufacturer's datasheet and technical documentation.
