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STB6NK60Z from ST,ST Microelectronics

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STB6NK60Z

Manufacturer: ST

N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET

Partnumber Manufacturer Quantity Availability
STB6NK60Z ST 739 In Stock

Description and Introduction

N-CHANNEL 600V 1 OHM 6A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET The STB6NK60Z is an N-channel MOSFET manufactured by STMicroelectronics.  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 600V  
- **Continuous Drain Current (ID):** 4A  
- **Pulsed Drain Current (IDM):** 16A  
- **Power Dissipation (Ptot):** 35W  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) @ VGS = 10V  
- **Threshold Voltage (VGS(th)):** 3V (min), 5V (max)  
- **Input Capacitance (Ciss):** 500pF (typ)  
- **Operating Junction Temperature (Tj):** -55°C to 150°C  

### **Descriptions:**  
- **Package:** TO-263 (D2PAK)  
- **Technology:** MDmesh™ (Low gate charge, fast switching)  
- **Application:** Designed for high-efficiency switching applications.  

### **Features:**  
- **Low gate charge** for reduced switching losses.  
- **High dv/dt capability** for robustness in harsh environments.  
- **Avalanche ruggedness** for improved reliability.  
- **100% avalanche tested** for consistent performance.  
- **Optimized for high-frequency switching** in power supplies and converters.  

This MOSFET is commonly used in **SMPS (Switched-Mode Power Supplies), lighting, motor control, and industrial applications**.

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