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STB5NC70Z from ST,ST Microelectronics

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STB5NC70Z

Manufacturer: ST

N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET

Partnumber Manufacturer Quantity Availability
STB5NC70Z ST 50 In Stock

Description and Introduction

N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET The STB5NC70Z is a Power MOSFET manufactured by STMicroelectronics. Below are its key specifications, descriptions, and features:  

### **Manufacturer:** STMicroelectronics  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 700V  
- **Continuous Drain Current (ID):** 4.5A (at 25°C)  
- **Pulsed Drain Current (IDM):** 18A  
- **Power Dissipation (PD):** 50W (at 25°C)  
- **Gate-Source Voltage (VGS):** ±30V  
- **On-Resistance (RDS(on)):** 1.5Ω (max) at VGS = 10V  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 500pF (typical)  
- **Operating Junction Temperature (TJ):** -55°C to 150°C  

### **Description:**  
The STB5NC70Z is an N-channel Power MOSFET designed for high-voltage applications, featuring low gate charge and fast switching characteristics. It is suitable for switching power supplies, motor control, and other high-efficiency power management applications.  

### **Features:**  
- **High Voltage Capability:** 700V breakdown voltage  
- **Low On-Resistance:** Minimizes conduction losses  
- **Fast Switching:** Optimized for high-frequency operation  
- **Avalanche Ruggedness:** Enhanced reliability under high-energy conditions  
- **Low Gate Charge:** Reduces drive requirements  
- **TO-220 Package:** Provides efficient thermal dissipation  

This information is based solely on the manufacturer's datasheet.

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