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RT2N04M from MITSUBISHI

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RT2N04M

Manufacturer: MITSUBISHI

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

Partnumber Manufacturer Quantity Availability
RT2N04M MITSUBISHI 15000 In Stock

Description and Introduction

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE **Introducing the RT2N04M: A High-Performance MOSFET for Modern Electronics**  

The RT2N04M is a cutting-edge N-channel MOSFET designed to meet the demands of high-efficiency power management in a wide range of electronic applications. With its advanced semiconductor technology, this component delivers superior performance, reliability, and energy efficiency, making it an ideal choice for power supply circuits, motor control, and switching applications.  

Engineered for low on-resistance and fast switching speeds, the RT2N04M minimizes power loss while maximizing thermal stability. Its robust construction ensures durability under high-load conditions, providing consistent performance in industrial, automotive, and consumer electronics. The MOSFET operates with a drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 2A, offering a balanced combination of power handling and efficiency.  

One of the standout features of the RT2N04M is its compact TO-252 (DPAK) package, which allows for easy integration into space-constrained designs without compromising thermal dissipation. This makes it particularly suitable for modern, miniaturized electronic devices where efficient heat management is critical.  

Whether used in DC-DC converters, battery management systems, or LED drivers, the RT2N04M provides engineers with a reliable and cost-effective solution for enhancing circuit performance. Its low gate charge and high switching speed further contribute to improved energy efficiency, reducing overall system power consumption.  

For designers seeking a high-quality MOSFET that combines performance, durability, and versatility, the RT2N04M stands out as a dependable choice. Its technical specifications and robust design make it well-suited for next-generation electronic applications, ensuring long-term reliability and optimal functionality.

Application Scenarios & Design Considerations

COMPOSITE TRANSISTOR WITH RESISTOR FOR SWITCHING APPLICATION SILICON NPN EPITAXIAL TYPE

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