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RJK1002DPN-E0 from NEC

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15.625ms

RJK1002DPN-E0

Manufacturer: NEC

N-Channel MOS FET 100 V, 70 A, 7.6 m

Partnumber Manufacturer Quantity Availability
RJK1002DPN-E0,RJK1002DPNE0 NEC 30000 In Stock

Description and Introduction

N-Channel MOS FET 100 V, 70 A, 7.6 m **Enhance Power Efficiency with the RJK1002DPN-E0 MOSFET**  

In today’s fast-evolving electronics landscape, efficiency and reliability are paramount. The RJK1002DPN-E0 MOSFET stands out as a high-performance solution for power management applications, delivering exceptional performance in a compact package.  

Designed for high-speed switching, the RJK1002DPN-E0 features an ultra-low on-resistance (RDS(on)), minimizing power loss and improving thermal performance. This makes it an ideal choice for DC-DC converters, motor drivers, and power supply units where energy efficiency is critical. With a robust voltage rating and high current-handling capability, it ensures stable operation even in demanding environments.  

The device’s advanced trench MOSFET technology enhances switching efficiency while reducing conduction losses, making it suitable for both industrial and consumer electronics. Its compact form factor allows for seamless integration into space-constrained designs without compromising performance. Additionally, the RJK1002DPN-E0 offers excellent thermal characteristics, ensuring long-term reliability under high-load conditions.  

Engineers and designers seeking a dependable power MOSFET will appreciate the RJK1002DPN-E0’s balance of efficiency, durability, and cost-effectiveness. Whether used in battery management systems, LED lighting, or portable electronics, this component delivers consistent performance, helping to optimize power efficiency across a wide range of applications.  

For those prioritizing performance and energy savings, the RJK1002DPN-E0 is a compelling choice that meets the rigorous demands of modern power electronics.

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