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R1LV0816ASB-5SI from RENESAS

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R1LV0816ASB-5SI

Manufacturer: RENESAS

8Mb Advanced LPSRAM (512k word x 16bit)

Partnumber Manufacturer Quantity Availability
R1LV0816ASB-5SI,R1LV0816ASB5SI RENESAS 135 In Stock

Description and Introduction

8Mb Advanced LPSRAM (512k word x 16bit) **Introduction to the R1LV0816ASB-5SI Electronic Component**  

The R1LV0816ASB-5SI is a high-performance, low-voltage static random-access memory (SRAM) integrated circuit designed for applications requiring fast data access and reliable operation. With a 5V operating voltage, this component is well-suited for embedded systems, industrial controls, and communication devices where speed and stability are critical.  

Featuring a 16-bit data bus and an asynchronous interface, the R1LV0816ASB-5SI ensures efficient data transfer with minimal latency. Its static nature eliminates the need for refresh cycles, making it ideal for real-time processing applications. The device offers a storage capacity of 1Mbit (64K x 16), providing ample memory for intermediate data handling in complex systems.  

Key attributes of the R1LV0816ASB-5SI include low power consumption, robust noise immunity, and a wide operating temperature range, ensuring reliable performance in demanding environments. Its industry-standard pinout simplifies integration into existing designs, while its compact form factor supports space-constrained applications.  

Engineers and designers often select this SRAM for its balance of speed, power efficiency, and durability. Whether used in medical equipment, automotive electronics, or industrial automation, the R1LV0816ASB-5SI delivers dependable memory solutions for mission-critical systems.  

In summary, the R1LV0816ASB-5SI is a versatile and high-performance SRAM component, offering a combination of speed, reliability, and ease of integration for advanced electronic applications.

Application Scenarios & Design Considerations

8Mb Advanced LPSRAM (512k word x 16bit)

Alternative Part Number

  • IS62WV5128BLL-55TLI --: Pin-compatible 512Kx16 low-power asynchronous SRAM with similar 55ns access time, widely used as a drop-in replacement for Renesas 8Mb SRAMs.
  • CY62148EV30LL-55ZSXI --: 8Mb 512Kx16 low-power SRAM in the same class with 55ns speed and compatible TSOP package, suitable functional substitute.
  • AS6C8016-55TIN --: 8Mb 512Kx16 low-power CMOS SRAM with 55ns access time, commonly offered as a direct second-source alternative to Renesas R1LV series.

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