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PUMD6 from NXP,NXP Semiconductors

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PUMD6

Manufacturer: NXP

NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open

Partnumber Manufacturer Quantity Availability
PUMD6 NXP 318000 In Stock

Description and Introduction

NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open **Introduction to the PUMD6 Dual NPN/NPN Resistor-Equipped Transistor**  

The PUMD6 is a compact, surface-mount dual NPN/NPN transistor with built-in resistors, designed for efficient switching and amplification in low-power electronic circuits. This component integrates two matched NPN transistors, each with base resistors, in a single package, reducing board space and simplifying circuit design.  

Housed in a small SOT-363 (SC-88) package, the PUMD6 is ideal for applications requiring high-density mounting, such as portable devices, IoT modules, and signal processing circuits. The integrated resistors eliminate the need for external biasing components, improving reliability and reducing assembly costs.  

Key features include a low saturation voltage, ensuring efficient switching performance, and a high current gain (hFE), making it suitable for amplification tasks. The device operates within a voltage range of up to 50V, with a maximum collector current of 100mA per transistor.  

Common applications include load switching, level shifting, and digital logic interfacing. Its dual-transistor configuration allows for use in differential amplifiers, inverters, and other analog or digital circuits requiring matched transistor pairs.  

Engineers favor the PUMD6 for its consistency, space-saving design, and ease of integration, making it a versatile choice for modern electronics. When selecting this component, designers should verify electrical characteristics against specific application requirements to ensure optimal performance.  

For detailed specifications, consult the manufacturer's datasheet for precise operating conditions and performance metrics.

Application Scenarios & Design Considerations

NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open

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