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PTB20111 from INFINEON

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PTB20111

Manufacturer: INFINEON, ERICSSON

85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Partnumber Manufacturer Quantity Availability
PTB20111 INFINEON, ERICSSON 10070 In Stock

Description and Introduction

85 Watts, 860-900 MHz Cellular Radio RF Power Transistor # Introduction to the PTB20111 Electronic Component  

The PTB20111 is a high-performance electronic component designed for precision applications in power management and signal conditioning. Engineered to meet stringent industry standards, this component offers reliable performance, low power consumption, and robust thermal stability, making it suitable for a wide range of industrial and consumer electronics.  

Key features of the PTB20111 include high efficiency, low noise operation, and a compact form factor, enabling seamless integration into space-constrained designs. Its advanced architecture ensures consistent voltage regulation, making it ideal for sensitive circuits requiring stable power delivery. Additionally, the component is designed to withstand harsh environmental conditions, including temperature fluctuations and electrical interference.  

Common applications for the PTB20111 include power supplies, battery management systems, IoT devices, and embedded systems where energy efficiency and reliability are critical. Its versatility allows engineers to optimize performance while minimizing power losses, contributing to longer operational lifespans in electronic systems.  

With a focus on quality and durability, the PTB20111 adheres to industry certifications, ensuring compliance with safety and performance standards. Whether used in automotive, industrial automation, or consumer electronics, this component provides a dependable solution for modern power management challenges.  

For designers seeking a balance of precision, efficiency, and durability, the PTB20111 represents a compelling choice in electronic component selection.

Application Scenarios & Design Considerations

85 Watts, 860-900 MHz Cellular Radio RF Power Transistor

Alternative Part Number

  • MRF151G --: Similar high-power RF MOSFET in the same power class, widely used as a drop-in replacement in RF amplifier designs.
  • BLF177 --: High-power RF LDMOS transistor with comparable output power and frequency range, suitable for similar RF amplifier applications.
  • SD2933 --: High-power RF MOSFET offering comparable gain and power characteristics for RF power amplifier circuits.
  • MRF9060 --: RF power LDMOS transistor in the same power class, commonly used as a drop-in substitute for Ericsson PTB-series RF power modules in amplifier designs.
  • BLF245 --: VHF/UHF RF power MOSFET with comparable output power and gain, suitable replacement for PTB20111 in RF amplifier applications.
  • SD1274 --: RF power transistor with similar frequency range and power rating, offering a functional alternative when the original Ericsson part is unavailable.

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