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PSMN5R0-100PS from NXP/PH,NXP Semiconductors

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PSMN5R0-100PS

Manufacturer: NXP/PH, NXP

N-channel 100 V 5 m惟 standard level MOSFET in TO-220

Partnumber Manufacturer Quantity Availability
PSMN5R0-100PS,PSMN5R0100PS NXP/PH, NXP 10010 In Stock

Description and Introduction

N-channel 100 V 5 m惟 standard level MOSFET in TO-220 **Introduction to the PSMN5R0-100PS Power MOSFET**  

The PSMN5R0-100PS is a high-performance N-channel power MOSFET designed for efficient power management in a variety of applications. With a low on-resistance (RDS(on)) of just 5.0 mΩ, this component minimizes conduction losses, making it ideal for high-current switching circuits. Its robust 100V drain-source voltage rating ensures reliable operation in demanding environments, including industrial power supplies, motor drives, and DC-DC converters.  

Featuring a compact and thermally efficient package, the PSMN5R0-100PS delivers excellent power dissipation capabilities while maintaining a small footprint. Its fast switching characteristics enhance efficiency in high-frequency applications, reducing energy waste and improving overall system performance. Additionally, the MOSFET incorporates advanced silicon technology to ensure low gate charge, further optimizing switching speed and thermal management.  

Engineers and designers favor the PSMN5R0-100PS for its balance of performance, durability, and cost-effectiveness. Whether used in automotive systems, renewable energy solutions, or consumer electronics, this MOSFET provides a dependable solution for power control and conversion needs. Its combination of low resistance, high voltage tolerance, and thermal stability makes it a versatile choice for modern electronic designs.

Application Scenarios & Design Considerations

N-channel 100 V 5 m惟 standard level MOSFET in TO-220

Alternative Part Number

  • IPP100N06S3L-03 --: N-channel MOSFET with comparable 100V rating and low on-resistance, suitable drop-in for power switching applications.
  • STP100N6F6 --: 100V N-channel power MOSFET with similar current capability and low RDS(on), widely available alternative.
  • FDP047AN08A0 --: High-current N-channel MOSFET with low on-resistance, close electrical match for the original part in power supply designs.
  • IPP041N10N3 G --: 100 V N-channel MOSFET in TO-220 with very low on-resistance, close electrical match to the original and widely available.
  • STP150N10F7 --: 100 V N-channel power MOSFET with low RDS(on) and high current capability, suitable drop-in replacement in most switching applications.
  • FDP047N10 --: 100 V N-channel MOSFET in TO-220 with comparable voltage and current ratings, good alternative for power switching designs.

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