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PSMN4R3-100PS from NXP/PH,NXP Semiconductors

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PSMN4R3-100PS

Manufacturer: NXP/PH

N-channel 100 V 4.3 m惟 standard level MOSFET in TO-220

Partnumber Manufacturer Quantity Availability
PSMN4R3-100PS,PSMN4R3100PS NXP/PH 10000 In Stock

Description and Introduction

N-channel 100 V 4.3 m惟 standard level MOSFET in TO-220 **Introduction to the PSMN4R3-100PS Electronic Component**  

The PSMN4R3-100PS is a high-performance N-channel MOSFET designed for power management applications. With a low on-resistance (RDS(on)) of just 4.3 mΩ, this component minimizes power losses, making it ideal for high-efficiency switching circuits. Its robust 100V drain-source voltage (VDS) rating ensures reliable operation in demanding environments, such as automotive systems, industrial power supplies, and DC-DC converters.  

Featuring a compact and thermally efficient package, the PSMN4R3-100PS offers excellent power dissipation capabilities, enhancing system reliability under high-load conditions. Its fast switching characteristics further optimize performance in high-frequency applications.  

Engineers favor this MOSFET for its balance of efficiency, durability, and thermal management, making it a preferred choice for modern power electronics. Whether used in motor control, battery management, or energy conversion systems, the PSMN4R3-100PS delivers consistent performance while meeting stringent industry standards.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration within your design.

Application Scenarios & Design Considerations

N-channel 100 V 4.3 m惟 standard level MOSFET in TO-220

Alternative Part Number

  • IPP041N10N3 G --: 100 V N-channel MOSFET in TO-220 with very low RDS(on) around 4 mOhm, close match to the original's 4.3 mOhm rating and a widely available drop-in class replacement.
  • STP150N10F7 --: 100 V N-channel power MOSFET with low on-resistance and high current capability, suitable substitute for the PSMN4R3-100PS in switching and power applications.
  • FDP047AN08A0 --: 80-100 V class N-channel MOSFET with low RDS(on) and TO-220 package, offering comparable performance for power switching designs.

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