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PSMN2R0-30BL from NXP/PH,NXP Semiconductors

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PSMN2R0-30BL

Manufacturer: NXP/PH

N-channel 30 V 2.1 m鈩?logic level MOSFET in D2PAK

Partnumber Manufacturer Quantity Availability
PSMN2R0-30BL,PSMN2R030BL NXP/PH 10000 In Stock

Description and Introduction

N-channel 30 V 2.1 m鈩?logic level MOSFET in D2PAK The **PSMN2R0-30BL** is a high-performance N-channel MOSFET designed for power management applications. With a low on-resistance (RDS(on)) of just 2.0 mΩ, this component ensures minimal power loss, making it ideal for high-efficiency switching circuits. Its 30V drain-source voltage rating provides robust performance in a variety of industrial and automotive systems.  

Featuring a compact **LFPAK56** package, the PSMN2R0-30BL offers excellent thermal performance and power density, enabling reliable operation in space-constrained designs. The MOSFET supports high current handling, making it suitable for applications such as DC-DC converters, motor control, and battery management systems.  

Key specifications include a continuous drain current of up to 100A, fast switching characteristics, and enhanced avalanche ruggedness. These attributes contribute to improved system efficiency and durability under demanding conditions.  

Engineers value the PSMN2R0-30BL for its balance of low conduction losses, thermal stability, and compact form factor. Whether used in power supplies, load switches, or energy-efficient designs, this MOSFET delivers consistent performance while maintaining high reliability.  

For designers seeking a high-current, low-loss switching solution, the PSMN2R0-30BL stands out as a dependable choice in modern power electronics.

Application Scenarios & Design Considerations

N-channel 30 V 2.1 m鈩?logic level MOSFET in D2PAK

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