IC Phoenix logo

Home ›  P  › P32 > PSMN057-200P

PSMN057-200P from NXP/PH,NXP Semiconductors

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

PSMN057-200P

Manufacturer: NXP/PH, PHILIPS, PH

N-channel TrenchMOS(tm) transistor
Partnumber Manufacturer Quantity Availability
PSMN057-200P,PSMN057200P NXP/PH, PHILIPS, PH 10229 In Stock

Description and Introduction

N-channel TrenchMOS(tm) transistor **Introduction to the PSMN057-200P Electronic Component**  

The PSMN057-200P is a high-performance N-channel power MOSFET designed for efficient switching and power management applications. With a low on-resistance (RDS(on)) and high current-handling capability, this component is well-suited for demanding environments such as DC-DC converters, motor control, and load switching.  

Featuring a robust 200V drain-source voltage rating and a continuous drain current of up to 57A, the PSMN057-200P ensures reliable operation in high-power circuits. Its advanced trench technology minimizes conduction losses, enhancing energy efficiency in power systems. Additionally, the MOSFET offers fast switching speeds, making it ideal for high-frequency applications.  

The device is housed in a TO-220 package, providing excellent thermal performance and mechanical durability. Its lead-free and RoHS-compliant construction aligns with modern environmental standards.  

Engineers and designers often select the PSMN057-200P for its balance of performance, reliability, and cost-effectiveness. Whether used in industrial automation, renewable energy systems, or automotive electronics, this MOSFET delivers consistent power handling with minimal losses.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration into circuit designs.

Application Scenarios & Design Considerations

N-channel TrenchMOS(tm) transistor

Alternative Part Number

  • IRF540N --: Widely available 100V N-channel MOSFET with low RDS(on); a common substitute when voltage rating can be relaxed, with similar TO-220 package and gate drive requirements.
  • STP75NF75 --: 75V N-channel power MOSFET in TO-220 with low on-resistance and high current capability, suitable as a drop-in style replacement for many 200V-class switching applications.
  • FQP50N06 --: 60V N-channel MOSFET in TO-220 offering low RDS(on) and good ruggedness; a practical alternative for lower-voltage versions of the original design.
  • IRF540N --: Widely available N-channel MOSFET with comparable voltage and current ratings, suitable as a functional substitute in many switching applications.
  • STP60NF06 --: N-channel power MOSFET with similar on-resistance and current capability, offering a different series and manufacturer for drop-in evaluation.
  • FQP50N06 --: Alternative N-channel MOSFET in a TO-220 package with comparable ratings, useful when the original Philips part is unavailable.
  • IRFP460 --: 200V N-channel MOSFET with similar voltage rating and low on-resistance, widely available and commonly used as a substitute in power switching applications.
  • STP16NF06 --: N-channel MOSFET in TO-220 package with comparable current handling and switching characteristics, suitable for similar power supply and motor drive circuits.
  • FQP19N20 --: 200V N-channel MOSFET offering similar voltage and current ratings, a practical drop-in alternative for general switching and amplifier designs.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips