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PSMN050-80BS from NXP/PH,NXP Semiconductors

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PSMN050-80BS

Manufacturer: NXP/PH

N-channel 80 V 46 m鈩?standard level MOSFET in D2PAK

Partnumber Manufacturer Quantity Availability
PSMN050-80BS,PSMN05080BS NXP/PH 10000 In Stock

Description and Introduction

N-channel 80 V 46 m鈩?standard level MOSFET in D2PAK **Introduction to the PSMN050-80BS Power MOSFET**  

The PSMN050-80BS is a high-performance N-channel power MOSFET designed for efficient power management in demanding applications. With a low on-resistance (RDS(on)) of just 5.0 mΩ (max) at 10 V, this component minimizes conduction losses, making it ideal for high-current switching circuits. Its robust 80 V drain-to-source voltage (VDS) rating ensures reliable operation in industrial, automotive, and power supply systems.  

Featuring a compact and thermally efficient D2PAK (TO-263) package, the PSMN050-80BS offers excellent power dissipation capabilities while maintaining a small footprint. The device is optimized for fast switching speeds, reducing energy loss in high-frequency applications such as DC-DC converters, motor drives, and battery management systems.  

Key attributes include a high continuous drain current (ID) rating of 80 A and an advanced silicon design that enhances thermal performance. Its avalanche-rated construction further improves durability under transient voltage conditions.  

Engineers favor the PSMN050-80BS for its balance of efficiency, power handling, and reliability, making it a preferred choice for modern power electronics designs. Whether used in automotive modules or industrial inverters, this MOSFET delivers consistent performance under challenging conditions.

Application Scenarios & Design Considerations

N-channel 80 V 46 m鈩?standard level MOSFET in D2PAK

Alternative Part Number

  • IRF540N --: Widely available 100V N-channel MOSFET in TO-220, similar RDS(on) class and current rating, easy drop-in for many 80V switching applications.
  • STP60NF06 --: 60V N-channel power MOSFET with low on-resistance and high current capability, suitable replacement where 80V margin is not strictly required.
  • FQP50N06 --: 60V N-channel MOSFET in TO-220 with comparable current and RDS(on), commonly used as a cross for 80V logic-level power MOSFETs.

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