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PSMN038-100K from NXP/PH,NXP Semiconductors

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PSMN038-100K

Manufacturer: NXP/PH, PHILIPS, NXP

N-channel TrenchMOS SiliconMAX standard level FET
Partnumber Manufacturer Quantity Availability
PSMN038-100K,PSMN038100K NXP/PH, PHILIPS, NXP 12582 In Stock

Description and Introduction

N-channel TrenchMOS SiliconMAX standard level FET **Introduction to the PSMN038-100K Electronic Component**  

The PSMN038-100K is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. Known for its low on-resistance and high current-handling capabilities, this component is widely used in power supplies, motor control circuits, and DC-DC converters.  

With a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of up to 38A, the PSMN038-100K ensures reliable operation under demanding conditions. Its low gate charge and fast switching characteristics make it particularly suitable for high-frequency applications, minimizing power losses and improving overall system efficiency.  

The MOSFET is housed in a compact, industry-standard package, facilitating easy integration into PCB designs while maintaining excellent thermal performance. Its robust construction ensures durability, making it a preferred choice for industrial, automotive, and consumer electronics applications where reliability is critical.  

Engineers and designers value the PSMN038-100K for its balance of performance, efficiency, and cost-effectiveness, making it a versatile solution for modern power electronics. Whether used in switching regulators or load drivers, this component delivers consistent performance in a wide range of operating conditions.

Application Scenarios & Design Considerations

N-channel TrenchMOS SiliconMAX standard level FET

Alternative Part Number

  • IRF540N --: Widely available 100V N-channel MOSFET with comparable RDS(on) and current rating, suitable drop-in replacement in most switching applications.
  • STP55NF06 --: 60V logic-level N-channel MOSFET with low RDS(on); good alternative where voltage margin allows and cost/availability matters.
  • FQP30N06L --: Logic-level 60V N-channel MOSFET in TO-220, easy to drive and commonly stocked, suitable for lower-voltage switching designs.
  • IRF540N --: Widely available 100V N-channel MOSFET with comparable RDS(on) and current rating, suitable drop-in replacement in most switching applications.
  • STP55NF06 --: 60V N-channel MOSFET with low on-resistance and high current capability; good alternative where voltage margin allows.
  • FQP30N06L --: Logic-level 60V N-channel MOSFET with similar package and current rating, easy to source and cost-effective.
  • IRF540N --: Widely available 100V N-channel MOSFET in TO-220 with comparable current rating and low on-resistance, a common drop-in substitute for 100V power switching applications.
  • STP75NF75 --: 75A 75V N-channel MOSFET in TO-220 offering similar or better current handling and low RDS(on), suitable for power supply and motor drive replacements.
  • FQP50N06 --: 60V 50A N-channel MOSFET in TO-220 with low on-resistance, a cost-effective alternative for lower-voltage variants of the same switching role.

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